FAQsVolume 5 Issue 12
December-2018
eISSN: 2349-5162
- Share us
-
-
-
Journal of Emerging Technologies and Innovative Research ( An International Scholarly Open Access Journal, Peer-reviewed, Refereed Journal )
Impact factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal
UGC Approved Journal no 63975(19)
ISSN: 2349-5162 | ESTD Year : 2014 Call for Paper
Volume 11 | Issue 5 | May 2024
ISSN: 2349-5162 | ESTD Year : 2014 Call for Paper
Volume 11 | Issue 5 | May 2024
JETIREXPLORE- Search Thousands of research papers
Contact Us Click Here
WhatsApp Contact Click Here
Published in:
UGC and ISSN approved 7.95 impact factor UGC Approved Journal no 63975
Unique Identifier
Published Paper ID:
JETIRDT06112
Registration ID:
231951
Page Number
Important Links:
Jetir RMS
Title
DC and High Frequency Analysis of InGaAs/InP HBT
Authors
Abstract
In this brief, the performance analysis of InGaAs/InP HBT is performed. DEVEDIT tool of Silvaco Atlas Device Simulator is utilized to construct the present structure. InP material comprises of higher energy bandgap than InGaAs, thus forming a heterojunction. This n-p-n HBT consists of InP emitter, base and collector of InGaAs materials. Accordingly, the ac current gain, gummel plot, and s parameters are calculated.
Key Words
InGaAs, InP, HBT, DEVEDIT.
Cite This Article
"DC and High Frequency Analysis of InGaAs/InP HBT", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.5, Issue 12, page no.778-781, December 2018, Available :http://www.jetir.org/papers/JETIRDT06112.pdf
ISSN
2349-5162 | Impact Factor 7.95 Calculate by Google Scholar
An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator
Cite This Article
"DC and High Frequency Analysis of InGaAs/InP HBT", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.5, Issue 12, page no. pp778-781, December 2018, Available at : http://www.jetir.org/papers/JETIRDT06112.pdf
Publication Details
Published Paper ID: JETIRDT06112
Registration ID: 231951
Published In: Volume 5 | Issue 12 | Year December-2018
Page No: 778-781
Country: -, -, - .
Area: Engineering
ISSN Number: 2349-5162
Publisher: IJ Publication
Published Paper URL :: https://www.jetir.org/view?paper=JETIRDT06112
Published Paper PDF: https://www.jetir.org/papers/JETIRDT06112
Download Paper / Preview Article
Download Paper
Preview This Article
Download PDF
Downloads
0002877
Print This Page
Important Links:
Jetir RMS
