• A. Srivastava

In this paper we review the case of two materials system namely VO2(B) and NdNiO3 which exhibits a metal insulator transition and makes a schottky junction with 0.01 and 0.5 wt % (100) Nb: SrTiO3 substrates. The junction shows rectifying behavior all across the metal insulator transition (MIT). The current-voltage and capacitance characteristic shows no evidence of MIT. This indicates that the surface electronics iof these materials is distinct from bulk and shows no bulk like transition

Surface electronic states, metal insulator

"Interface and surface electronic states of metal insulator materials studied across the transition forming Schottky interface with different Nb doping", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.5, Issue 12, page no.1189-1194, December 2018, Available :http://www.jetir.org/papers/JETIRDT06194.pdf

"Interface and surface electronic states of metal insulator materials studied across the transition forming Schottky interface with different Nb doping", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.5, Issue 12, page no. pp1189-1194, December 2018, Available at : http://www.jetir.org/papers/JETIRDT06194.pdf