• Irfan Ahmad Pindoo
• Sanjeet K. Sinha

Due to the continuous scaling of the conventional metal oxide semiconductor field effect transistor (MOSFET), we have finally reached to a limit where industry is not able to sustain the scaling of MOSFET due to its ultra nano scale range (below 50 nm). The reason attributed are the leakage currents, higher power dissipation, threshold roll-off, etc. Thus, other alternatives need to be studied in order to sustain the scalability. In that regard, this paper focuses on carbon nano tube field effect transistors (CNTFET) as one of the solutions to the existing problems. We have explained the device details, operation and the characteristics of CNTs.

carbon nanotube, scaling, MOSFET, tunneling, CMOS

"Carbon Nanotube Transistors: A Review", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 1, page no.1774-1776, January 2019, Available :http://www.jetir.org/papers/JETIRDW06291.pdf

"Carbon Nanotube Transistors: A Review", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 1, page no. pp1774-1776, January 2019, Available at : http://www.jetir.org/papers/JETIRDW06291.pdf