• Ashutosh Kumar
• D. Kumar

Cu(In, Ga)S2 (CIGS) is a widely used absorber material in the thin-film photovoltaic (PV) deices. In the present work, SCAPS (solar cell capacitance simulator),simulatoris used to model CIGS absorber based solar cells. The work is mainly focused on the effect of electron affinity of CIGS on performance of the PV device. The layer parameters such as thickness and band gap are kept constant during simulation; thickness of p-CIGS, n-CdS, n-ZnO are 3.0µm, 0.050µm and 0.20µm respectively, the band gap of CIGS, CdS, Al doped ZnO are 1.1eV, 2.4eV, 3.3eV respectively. The device parameters such as open circuit voltage (VOC), short circuit current density (JSC), fill factor (FF) and PV efficiency (η) are calculated.

CIGS, SCAPS, J-V characteristic, electron affinity, solar cell.

"Effect Of Electron Affinity On CIGS Based Solar Cells", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 1, page no.669-674, January 2019, Available :http://www.jetir.org/papers/JETIRDY06106.pdf

"Effect Of Electron Affinity On CIGS Based Solar Cells", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 1, page no. pp669-674, January 2019, Available at : http://www.jetir.org/papers/JETIRDY06106.pdf