• YOGESH KUMAR VERMA
• BHUPINDER VERMA

In this paper, the analysis of AlGaN/GaN field effect transistor (FET) is performed. Normally, III-V HFET operates in depletion mode with negative value of threshold voltage. The negative threshold voltage is due to higher inversion charge density due to polarization charges and discontinuity in the conduction band at the heterointerface of AlGaN barrier and GaN buffer layer. The present device can successfully operate in enhancement mode and provides positive threshold voltage by reducing polarization charges at the heterointerface. The device can be used in the electronic applications where the demand of minimum power dissipation and minimum leakage current is on highest priority.

III-V; FET; threshold voltage; AlGaN; GaN

"Normally OFF AlGaN/GaN Gate All Around Field Effect Transistor for Analog Application", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 3, page no.1505-1510, March-2019, Available :http://www.jetir.org/papers/JETIREL06230.pdf

"Normally OFF AlGaN/GaN Gate All Around Field Effect Transistor for Analog Application", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 3, page no. pp1505-1510, March-2019, Available at : http://www.jetir.org/papers/JETIREL06230.pdf