UGC Approved Journal no 63975

ISSN: 2349-5162 | ESTD Year : 2014
Call for Paper
Volume 9 | Issue 1 | January 2022

JETIREXPLORE- Search Thousands of research papers



WhatsApp Contact
Click Here

Published in:

Volume 6 Issue 6
June-2019
eISSN: 2349-5162

UGC and ISSN approved 7.95 impact factor UGC Approved Journal no 63975

7.95 impact factor calculated by Google scholar

Unique Identifier

Published Paper ID:
JETIREY06140


Registration ID:
312775

Page Number

750-757

Share This Article


Jetir RMS

Title

Advancement in Lithographic Techniques for Semiconductor Devices

Authors

Abstract

Persistent quick contracting of highlight size of semiconductors made the specialists to look for elective designing techniques as the regular photolithography accompanies its inherent goals limit. Right now, encouraging methods have been proposed as cutting edge lithography (NGL) that has the possibilities to accomplish both high-volume creation and exceptionally high goals. This paper surveys the promising NGL strategies and presents the difficulties and a point of view on future headings of the NGL procedures. Outrageous bright lithography (EUVL) is considered as the principle possibility for sub-10-nm assembling, and it might meet the present necessities of the business. Wonderful advancement in EUVL has been made and the apparatuses will be accessible for business activity soon. Mask less lithography systems are utilized for designing in R&D, veil/form manufacture and low-volume chip structure. Guided self-get together has just been figured it out in research center and further exertion will be expected to make it as NGL arrangement. Nanoimprint lithography has developed appealingly because of its straightforward procedure steps, high throughput, high goals and ease and become one of the business stages for nanofabrication. Various testing issues are holding up ahead, and further innovative advances are required to make the systems huge and solid to fulfill the present need. At long last, a relative investigation is introduced among these procedures.

Key Words

Nanolithography Throughput Resolution Defect thickness Overlay

Cite This Article

" Advancement in Lithographic Techniques for Semiconductor Devices", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 6, page no.750-757, June-2019, Available :http://www.jetir.org/papers/JETIREY06140.pdf

ISSN


2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

" Advancement in Lithographic Techniques for Semiconductor Devices", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 6, page no. pp750-757, June-2019, Available at : http://www.jetir.org/papers/JETIREY06140.pdf

Publication Details

Published Paper ID: JETIREY06140
Registration ID: 312775
Published In: Volume 6 | Issue 6 | Year June-2019
DOI (Digital Object Identifier):
Page No: 750-757
Country: -, -, India .
Area: Engineering
ISSN Number: 2349-5162


Preview This Article


Downlaod

Click here for Article Preview

Download PDF

Downloads

000195

Print This Page

Current Call For Paper

Jetir RMS