UGC Approved Journal no 63975

ISSN: 2349-5162 | ESTD Year : 2014
Call for Paper
Volume 9 | Issue 1 | January 2022

JETIREXPLORE- Search Thousands of research papers



WhatsApp Contact
Click Here

Published in:

Volume 6 Issue 2
February-2019
eISSN: 2349-5162

UGC and ISSN approved 7.95 impact factor UGC Approved Journal no 63975

7.95 impact factor calculated by Google scholar

Unique Identifier

Published Paper ID:
JETIRFE06005


Registration ID:
316979

Page Number

20-25

Share This Article


Jetir RMS

Title

Metal Oxide Silicon Field Effect Transistor (MOSFET) technology based Automated White Balance

Abstract

To match the brightness of the scene, the Auto Exposure Control (AEC) system of a digital radiography selects the optimum aperture size, gain setting, and exposure length. Although Metal Oxide Silicon Field Effect Transistor (MOSFET) technology has enabled techniques such as automated white balance and automatic exposure, sophisticated systems to quickly determine the right exposure when users change the scene are absent. The problem becomes more serious when sections of the recorded video frame are overexposed or underexposed. The suggested system includes a robust AEC approach for real-time video capture. The method dynamically picks suitable sensor operational modes to generate a more accurate measurement of scene brightness. The auto exposure system also includes devices that detect moving objects and fluorescent light flicker. The AWB technology is trustworthy and helps to improve the quality of recorded footage in a variety of conditions.

Key Words

Metal Oxide Silicon Field Effect Transistor (MOSFET) technology based Automated White Balance

Cite This Article

"Metal Oxide Silicon Field Effect Transistor (MOSFET) technology based Automated White Balance", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 2, page no.20-25, February-2019, Available :http://www.jetir.org/papers/JETIRFE06005.pdf

ISSN


2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"Metal Oxide Silicon Field Effect Transistor (MOSFET) technology based Automated White Balance", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 2, page no. pp20-25, February-2019, Available at : http://www.jetir.org/papers/JETIRFE06005.pdf

Publication Details

Published Paper ID: JETIRFE06005
Registration ID: 316979
Published In: Volume 6 | Issue 2 | Year February-2019
DOI (Digital Object Identifier):
Page No: 20-25
Country: -, -, India .
Area: Engineering
ISSN Number: 2349-5162


Preview This Article


Downlaod

Click here for Article Preview

Download PDF

Downloads

00031

Print This Page

Current Call For Paper

Jetir RMS