• Munaza Yousf
• Narwant Singh Grewal
• Gurpurneet Kaur

The GAA MOSFET (Gate All Around Metal Oxide Semiconductor Field Effect Transistor) technology have been considered as suitable one for implementation of digital circuits at nanoscale. The single metal Schottky barrier Source /drain GAA MOSFET devices have been designed using 5nm radius, 10nm channel length, and high-k gate dielectric gate oxide. The electrical characteristics of proposed devices like ION, IOFF, ION/IOFF, SS and DIBL have been evaluated for variable work function and temperature. The proposed devices showed diminished SS and DIBL as compared to existing literature. Hence, these proposed structures are suitable in low power design circuitry.

Semiconductor, MOSFET, Nanoscale, Subthrehold Swing, Drain Induced Barrier Lowering

"IMPACT OF WORK FUNCTION AND TEMPERATURE VARIATION ON SCHOTTKY-BARRIER HETERO-DIELECTRIC GATE ALL AROUND NANOWIRE FIELD EFFECT TRANSISTOR", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.9, Issue 8, page no.167-176, August-2022, Available :http://www.jetir.org/papers/JETIRFQ06032.pdf

"IMPACT OF WORK FUNCTION AND TEMPERATURE VARIATION ON SCHOTTKY-BARRIER HETERO-DIELECTRIC GATE ALL AROUND NANOWIRE FIELD EFFECT TRANSISTOR", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.9, Issue 8, page no. pp167-176, August-2022, Available at : http://www.jetir.org/papers/JETIRFQ06032.pdf