• Saji Joseph

Among the many novel device geometries for continuing the process of downscaling in future technology nodes, the double-gate MOSFET (DG-MOSFET) is a potential candidate to replace the conventional bulk MOSFET due to its superior performance in the sub-10 nm range. In a DG-MOSFET, the presence of more number of gates improves the electrostatic control of the channel by the gate and hence reduces short channel effects. This work investigates the influence of channel thickness on one of the major short channel effects, the DIBL, for fully depleted Si channel DG-MOSFETs with channel length of 12nm. It is found that the DIBL decreases almost linearly from its value of 104mV/V at a channel thickness of 5nm to 8.6mV/V at a channel thickness of 2nm. Thus, a careful engineering of channel thickness can suppress the DIBL to the required minimum level when DG-MOSFETs are downscaled to meet future market requirements.

DIBL, DG-MOSFET, short channel effect, NEGF.

" CHANNEL THICKNESS DEPENDENCE OF DIBL EFFECT IN DOUBLE GATE MOSFET", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.5, Issue 7, page no.43-47, July-2018, Available :http://www.jetir.org/papers/JETIR1807A06.pdf

" CHANNEL THICKNESS DEPENDENCE OF DIBL EFFECT IN DOUBLE GATE MOSFET", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.5, Issue 7, page no. pp43-47, July-2018, Available at : http://www.jetir.org/papers/JETIR1807A06.pdf