UGC Approved Journal no 63975(19)

ISSN: 2349-5162 | ESTD Year : 2014
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Published in:

Volume 5 Issue 5
May-2018
eISSN: 2349-5162

UGC and ISSN approved 7.95 impact factor UGC Approved Journal no 63975

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Published Paper ID:
JETIR1905R96


Registration ID:
221327

Page Number

654-656

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Title

Study of Non-ideal effects in doped semiconductor thermistors

Abstract

. Semiconductor thermistors have been used for several years and their ideal behavior is well known both experimentally and theoretically. Their current performance is limited by non-ideal behaviors. These include 1/f noise and non-ohmic effects. We find that the 1/f noise appears to be a 2-D effect, and can be greatly reduced by fabricating thicker thermistors. Eliminating this noise could improve the intrinsic detector resolution as much as 40%. It also allows us to study other sources of excess noise in the thermometer. The non-ohmic behavior can be empirically explained using a hot-electron model. Although this model does not seem suitable for semiconductors in the variable range-hopping regime, where the electrons are localized, it fits the experimental data quite well. We measured an excess white noise at low frequencies consistent with the predicted thermodynamic fluctuations between electrons and phonons. We also measured a characteristic time of the non-ohmic behavior that is consistent with a C/G time constant in the hot electron model. Both results support the physical validity of the hot electron model. To optimize the performance of the next generation of detectors, we implemented the non-ideal behaviors in a model to predict the expected total noise and energy resolution. The comparison between the model and real data from the XRS experiment show good agreement.

Key Words

Non-ohmic, thermistors, hot-electron

Cite This Article

"Study of Non-ideal effects in doped semiconductor thermistors", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.5, Issue 5, page no.654-656, May-2018, Available :http://www.jetir.org/papers/JETIR1905R96.pdf

ISSN


2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"Study of Non-ideal effects in doped semiconductor thermistors", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.5, Issue 5, page no. pp654-656, May-2018, Available at : http://www.jetir.org/papers/JETIR1905R96.pdf

Publication Details

Published Paper ID: JETIR1905R96
Registration ID: 221327
Published In: Volume 5 | Issue 5 | Year May-2018
DOI (Digital Object Identifier):
Page No: 654-656
Country: MUZAFFARPUR, Bihar, India .
Area: Physics
ISSN Number: 2349-5162
Publisher: IJ Publication


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