• DIKSHA SHARMA
• Gurjot kour

In recent years, the demand of ultra-wide band (UWB) circuits is exponentially increasing for commercial applications because of its high data rate, low power level, low cost and multiband applications. Low noise amplifier (LNA) is first module of UWB receiver and it has important influence on the sensitivity and dynamic range of whole receiver system. Therefore to improve the performance of these systems, LNA needs to incorporate features, such as high power gain, wideband input matching, low power consumption to maintain battery life. To achieve these features, LNA is designed by using Double Gate MOSFET and these results are simulated and compared.

"Analytical modelling and simulation of a Low noise amplifier using double gate mosfet", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 6, page no.195-199, June-2019, Available :http://www.jetir.org/papers/JETIR1906952.pdf

"Analytical modelling and simulation of a Low noise amplifier using double gate mosfet", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 6, page no. pp195-199, June-2019, Available at : http://www.jetir.org/papers/JETIR1906952.pdf