UGC Approved Journal no 63975(19)

ISSN: 2349-5162 | ESTD Year : 2014
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Published in:

Volume 6 Issue 6
June-2019
eISSN: 2349-5162

UGC and ISSN approved 7.95 impact factor UGC Approved Journal no 63975

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Published Paper ID:
JETIR1906R74


Registration ID:
218128

Page Number

240-246

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Title

A Circuit Technique for Leakage Power reduction in CMOS VLSI Circuits

Abstract

Scaling of CMOS technology improved the speed nevertheless the leakage currents are leftover as an adverse effect. The problem has taken a serious turn as the scaling extends into ultra-deep-submicron (UDSM) region. These unsolicited leakage currents should be minimized for the smooth functioning of the circuit. Designing of such leakage free nanoscale CMOS circuits turns to be a challenging task. In this work, we address the issue of leakage power that arises with the device channel length scaling to sub-100nm. We present a circuit technique to mitigate the leakage currents of MOSFET through controlling the voltage at the source terminal of the MOSFET. CMOS inverter designed using the proposed technique results in 98% and 30% improvement in static and total power dissipation respectively compared with its conventional design. The simulation results of NAND and NOR gates designed using the same technique indicates 15.89% and 18.83% improvement in the total power compared with their corresponding conventional designs. 11-stage CMOS ring oscillator designed using the proposed technique is analyzed, and corresponding simulation results are reported. Comparison of the proposed circuits in terms of power dissipation and delay with two existing techniques is presented. The circuits designed using the proposed technique results in good Power-Delay Product (PDP).

Key Words

CMOS; UDSM; leakage power; CMOS inverter; low power dissipation.

Cite This Article

"A Circuit Technique for Leakage Power reduction in CMOS VLSI Circuits", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 6, page no.240-246, June 2019, Available :http://www.jetir.org/papers/JETIR1906R74.pdf

ISSN


2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"A Circuit Technique for Leakage Power reduction in CMOS VLSI Circuits", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 6, page no. pp240-246, June 2019, Available at : http://www.jetir.org/papers/JETIR1906R74.pdf

Publication Details

Published Paper ID: JETIR1906R74
Registration ID: 218128
Published In: Volume 6 | Issue 6 | Year June-2019
DOI (Digital Object Identifier):
Page No: 240-246
Country: HYDERABAD, TELANGANA, India .
Area: Engineering
ISSN Number: 2349-5162
Publisher: IJ Publication


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