• LEELA.R
• SWETHA.J
• SUJATHA.A

Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nanoscale. FinFETs are double-gate and multi-gate devices. Double-gate (DG) and Multi-gate FinFETs has better Short Channnels Effects(SCEs) performance compared to the conventional CMOS and stimulates technology scaling. The two gates of a FinFET can either be shorted for higher performance or independently controlled for lower leakage or reduced transistor count. In this paper, we are designing 16nm DGFinFETs and extracting their transfer characteristics by using HSPICE simulation tool. By using this phenomenon logic circuits can be configured in one of the modes such as SG mode, LP mode, IG mode and IG/LP mode. NAND gate is designed in the above mentioned nodes and comparison has been drawn between them. Full Adder is implemented in CMOS with 32nm technology and FinFET with 16nm technology along with its working waveform and performance analysis. SPICE simulations are carried out for the design and results are analyzed.

Double-gate FinFET (DGFinFET), Multi-gate High-performance, Independent gate (IG) mode, Logic Gates, Low power (LP) mode, Short channel effects (SCEs),Full Adder.

"Design and Implementation of High-performance Arithmetic and Logic Circuits based on FinFET 16nm Technology", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.10, Issue 7, page no.k246-k251, July-2023, Available :http://www.jetir.org/papers/JETIR2307A33.pdf

"Design and Implementation of High-performance Arithmetic and Logic Circuits based on FinFET 16nm Technology", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.10, Issue 7, page no. ppk246-k251, July-2023, Available at : http://www.jetir.org/papers/JETIR2307A33.pdf