• Ritu Kaundilya
• Dr. Arun Kumar

Recently, integrated circuits have relied heavily on the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). There have been several reports of MOSFET architectures with a channel length of 0.1 pm or less in the business literature due to the rapid development of this technology. In this study, a source follower based on a dual-gate MOSFET is designed [1]. The theoretical foundations of the key themes at play in this work have been examined. Mathematical analysis of circuit layout from first principles has been completed. The goal is to make the source follower in RF applications more reliable and easier to use. Short Channel Effects (SCEs) and other issues plague the standard Double Gate (DG) MOSFET. In this work, a Core Insulator Double Gate (CIDG) MOSFET with a specially constructed channel is presented for use in low-power digital circuits. The channel of the proposed device is insulated by a thin layer of material. Using a rectangular core insulator helps the device's performance characteristics by lowering the leakage current significantly. After verifying the simulation findings against the DG MOSFET reference data, a structural analysis is performed [2]. In this paper, we examine the advantages and disadvantages of both the double-gate and single-gate MOSFET configurations, with respect to a variety of performance parameters and channel material configurations, and we evaluate and compare a variety of channel materials, as well as the orientation of its structure and potential future applications.

Architectures, Structural, Orientation, Performance, Insulator, Semiconductor

"A COMPARATIVE STUDY OF DUAL GATE MOSFET CONCEPT", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.11, Issue 1, page no.e297-e305, January-2024, Available :http://www.jetir.org/papers/JETIR2401436.pdf

"A COMPARATIVE STUDY OF DUAL GATE MOSFET CONCEPT", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.11, Issue 1, page no. ppe297-e305, January-2024, Available at : http://www.jetir.org/papers/JETIR2401436.pdf