UGC Approved Journal no 63975

ISSN: 2349-5162 | ESTD Year : 2014
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Published in:

Volume 6 Issue 6
June-2019
eISSN: 2349-5162

UGC and ISSN approved 7.95 impact factor UGC Approved Journal no 63975

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Published Paper ID:
JETIRCO06015


Registration ID:
216110

Page Number

69-72

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Title

Transistor Heterogeneity

Abstract

In Today’s Industry, energy consumption to perform any task is of utmost importance. Life of any electronic device/ circuit can be enhanced by considering dynamic and leakage power as the primary goal for VLSI circuits. Electronic industries have developed various technologies focusing on size compactness for power reduction. This paper concentrates mainly on various transistors from like nMOS, pMOS, CMOS, SOI and FinFET, on their operation, the divergence between the transistors.

Key Words

pMOS, nMOS, CMOS, FinFET, SOI

Cite This Article

"Transistor Heterogeneity", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 6, page no.69-72, June-2019, Available :http://www.jetir.org/papers/JETIRCO06015.pdf

ISSN


2349-5162 | Impact Factor 7.95 Calculate by Google Scholar

An International Scholarly Open Access Journal, Peer-Reviewed, Refereed Journal Impact Factor 7.95 Calculate by Google Scholar and Semantic Scholar | AI-Powered Research Tool, Multidisciplinary, Monthly, Multilanguage Journal Indexing in All Major Database & Metadata, Citation Generator

Cite This Article

"Transistor Heterogeneity", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 6, page no. pp69-72, June-2019, Available at : http://www.jetir.org/papers/JETIRCO06015.pdf

Publication Details

Published Paper ID: JETIRCO06015
Registration ID: 216110
Published In: Volume 6 | Issue 6 | Year June-2019
DOI (Digital Object Identifier):
Page No: 69-72
Country: Bikaner, Rajasthan, India .
Area: Engineering
ISSN Number: 2349-5162


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