• Mohinder Bassi
• Suman Lata Tripathi

MOSFET and FinFET are dealing with various short channel effect problems due to which Moore’s law is not being implementable from past few years. With the introduction of parallel and flexible electronics, high computing and improved efficiency devices are being explored at nano-scale level. Recently various advanced foundries are planning for the fabrication of chips by utilizing newly explored devices. Nanowire transistor is one among those candidates having multiple advantages over FinFET due to its better gate controllability and being flexible in nature. Due to its tube type structure it avoids leakage current due to its gate all around property across channel. Various nanowire transistors can be grown parallel on single substrate for improved performance. In this paper, proposed design characteristics are presented for various temperature levels. Device is performing consistent for different temperature levels. DIBL is calculated for the nanowire transistor which is 3.75 times better than its predecessor.

DIBL, Short Channel Effects, Nanowire, Very Large Scale Integrated Circuits.

"Comparative Analysis Of Nanowire Transistor With Better Gate Controllability For Parallel Electronics", International Journal of Emerging Technologies and Innovative Research (www.jetir.org), ISSN:2349-5162, Vol.6, Issue 1, page no.238-241, January 2019, Available :http://www.jetir.org/papers/JETIRDX06039.pdf

"Comparative Analysis Of Nanowire Transistor With Better Gate Controllability For Parallel Electronics", International Journal of Emerging Technologies and Innovative Research (www.jetir.org | UGC and issn Approved), ISSN:2349-5162, Vol.6, Issue 1, page no. pp238-241, January 2019, Available at : http://www.jetir.org/papers/JETIRDX06039.pdf